Gunn Oscillators

DESCRIPTION

ZAX Gunn Oscillators utilize the bulk negative conductance properties of Gallium Arsenide (GaAs) and Indium Phosphide (InP) Gunn diodes to convert direct current (dc) into power at millimeter wave frequencies. Circuits incorporating the Gunn diodes are designed to provide state-of-the-art performance at frequencies from 18 GHz to above 120 GHz. InP Gunn Oscillators yield higher output power, higher efficiency, and lower AM noise than their GaAs counterparts. Tunable models feature high power-bandwidth products. Custom units are available to meet special customer requirements. ZAX is continuously advancing the state-of-the-art with new models to meet the highest performance requirements.

• ZAX Fixed Frequency Oscillators (ZFF series) provide high output power and excellent frequency and power stability. Bias tuning of Fixed Frequency Gunns permits precise frequency adjustment over relatively narrow bands.
  
• ZAX Fixed Frequency Oscillators (ZCSO series) provide moderate output power with high Q resonant cavity to yield very low phase noise and high temperature stability.
  
• ZAX Mechanically Tuned Oscillators (ZMT series) feature a single micrometer tuner which allows precise control of the frequency of oscillation with high output power and monotonic operation across wide frequency bands.
  
• ZAX Varactor Tuned Oscillators (ZVT series) permit voltage control of the frequency of oscillation. These Voltage Controlled Oscillators (VCO's) are available in narrow and wideband models which makes them ideally suited for phase locked and swept frequency applications.
  
• ZAX Injection Locked Oscillators (ZILO series) permit output powers greater than that available from single diode oscillators.

OPERATION

Each Gunn diode requires a specified dc voltage for optimal operation. The current required to turn-on a Gunn oscillator (the threshold current) normally exceeds the operating current as illustrated in Figure 1. The power supply should have low ripple to minimize AM and FM noise.